As16Ge8
As16Ge8 is a stable, semiconducting binary compound formed from arsenic and germanium.
About As16Ge8
As16Ge8 is a semiconducting material composed of arsenic and germanium. It exists as a thermodynamically stable phase located on the convex hull, indicating a robust structural arrangement that resists decomposition under standard conditions.
This compound is notable for its structural diversity, with multiple reported configurations across research databases. Its electronic character makes it an intriguing candidate for investigation in semiconductor physics and materials science applications.
Key Properties
Cross-validated computational properties for As16Ge8, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for As16Ge8, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pbam (No. 55) | orthorhombic | 0.72 | 0.0000 | -14.491 | 4.89 |
| — | — | — | — | — | 4.56 |
| Fd-3m (No. 227) | — | — | — | — | — |
| Pbam (No. 55) | — | — | — | — | — |
| Pbam (No. 55) | — | — | — | — | — |
| P63/mmc (No. 194) | — | — | — | — | — |
| Pbam (No. 55) | — | — | — | — | — |
| Pbam (No. 55) | — | — | — | — | — |
Applications
Where As16Ge8 is used.
Frequently Asked Questions
Common questions about As16Ge8, answered from cross-validated data.
What is As16Ge8?
As16Ge8 is a stable, semiconducting binary compound formed from arsenic and germanium.
What is As16Ge8 used for?
What is the band gap of As16Ge8?
Is As16Ge8 a metal, semiconductor, or insulator?
Is As16Ge8 thermodynamically stable?
What is the crystal structure of As16Ge8?
What is the density of As16Ge8?
How many polymorphs of As16Ge8 are known?
What elements does As16Ge8 contain?
Where does the data for As16Ge8 come from?
How It Compares
As16Ge8 represents a unique binary arrangement within the arsenic-germanium system. As a thermodynamically stable phase, it serves as a foundational reference point for understanding the phase stability and electronic behavior of complex semiconducting alloys in this class.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
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