As16Cd8Ge4
As16Cd8Ge4 is a semimetallic ternary compound composed of arsenic, cadmium, and germanium that is theoretically stable enough to warrant experimental synthesis.
About As16Cd8Ge4
As16Cd8Ge4 is a complex inorganic compound composed of arsenic, cadmium, and germanium. Its electronic structure is characterized by a near-zero band gap, placing it in the semimetallic regime where charge carrier behavior is highly sensitive to external conditions.
Due to its position near the thermodynamic hull, this material is considered a viable candidate for experimental synthesis. It represents a unique intersection of pnictogen and chalcogen-like chemistry, offering potential for specialized electronic applications where narrow-gap properties are required.
Key Properties
Cross-validated computational properties for As16Cd8Ge4, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for As16Cd8Ge4, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| Pnma (No. 62) | orthorhombic | 0.04 | 0.0051 | -3.668 | 5.50 |
| Pnma (No. 62) | — | — | — | — | — |
| — | — | — | — | — | 4.59 |
| Pnma (No. 62) | — | — | — | — | — |
Applications
Where As16Cd8Ge4 is used.
Frequently Asked Questions
Common questions about As16Cd8Ge4, answered from cross-validated data.
What is As16Cd8Ge4?
As16Cd8Ge4 is a semimetallic ternary compound composed of arsenic, cadmium, and germanium that is theoretically stable enough to warrant experimental synthesis.
What is As16Cd8Ge4 used for?
What is the band gap of As16Cd8Ge4?
Is As16Cd8Ge4 a metal, semiconductor, or insulator?
Is As16Cd8Ge4 thermodynamically stable?
What is the crystal structure of As16Cd8Ge4?
What is the density of As16Cd8Ge4?
How many polymorphs of As16Cd8Ge4 are known?
What elements does As16Cd8Ge4 contain?
Where does the data for As16Cd8Ge4 come from?
How It Compares
As a unique inorganic phase, As16Cd8Ge4 occupies a specialized niche in materials science. While many similar ternary systems are studied for their semiconducting potential, this compound stands out for its semimetallic character, providing a distinct electronic profile compared to more traditional wide-gap insulators or standard semiconductors.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
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