Al4As8Na4O28
Al4As8Na4O28 is a semiconducting, potentially synthesizable complex oxide containing aluminum, arsenic, sodium, and oxygen.

About Al4As8Na4O28
Al4As8Na4O28 is a complex aluminate-arsenate compound characterized by its semiconducting electronic nature. Its composition suggests a unique structural framework that bridges the properties of aluminum-based oxides and arsenic-containing materials, making it a subject of interest for fundamental solid-state studies.
As a near-hull stable material, this compound is considered likely to be synthesizable under controlled laboratory conditions. Its existence within structural databases highlights its potential as a precursor or functional component in specialized chemical applications where specific electronic band characteristics are required.
Key Properties
Cross-validated computational properties for Al4As8Na4O28, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Al4As8Na4O28, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P21/c (No. 14) | monoclinic | 2.73 | 0.0023 | -6.655 | 3.85 |
| P21/c (No. 14) | — | — | — | — | — |
| P21/c (No. 14) | monoclinic | — | — | — | 1.01 |
Applications
Where Al4As8Na4O28 is used.
Frequently Asked Questions
Common questions about Al4As8Na4O28, answered from cross-validated data.
What is Al4As8Na4O28?
Al4As8Na4O28 is a semiconducting, potentially synthesizable complex oxide containing aluminum, arsenic, sodium, and oxygen.
What is Al4As8Na4O28 used for?
What is the band gap of Al4As8Na4O28?
Is Al4As8Na4O28 a metal, semiconductor, or insulator?
Is Al4As8Na4O28 thermodynamically stable?
What is the crystal structure of Al4As8Na4O28?
What is the density of Al4As8Na4O28?
How many polymorphs of Al4As8Na4O28 are known?
What elements does Al4As8Na4O28 contain?
Where does the data for Al4As8Na4O28 come from?
How It Compares
As a unique complex oxide, Al4As8Na4O28 occupies a distinct niche in the landscape of inorganic materials. While it lacks direct structural siblings in this specific classification, its stability profile suggests it serves as a valuable case study for the integration of arsenic and aluminum into stable, semiconducting crystalline lattices.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- cod — Data from the Crystallography Open Database. Cite: Grazulis et al., Nucleic Acids Res. 40, D420 (2012).
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