Al2As4K2O14
Al2As4K2O14 is a wide-gap insulating inorganic compound containing aluminum, arsenic, potassium, and oxygen that is considered a candidate for experimental synthesis.
About Al2As4K2O14
Al2As4K2O14 is a complex inorganic compound composed of aluminum, arsenic, potassium, and oxygen. As a wide-gap insulating material, it exhibits electronic properties characteristic of stable dielectric frameworks, making it a subject of interest for structural chemistry studies.
Its status as a near-hull phase indicates that it is energetically favorable enough to be considered a viable target for experimental synthesis. The existence of multiple reported structures across databases highlights its importance in understanding the diverse coordination environments possible within this chemical system.
Key Properties
Cross-validated computational properties for Al2As4K2O14, aggregated across 3 databases.
Band GapEnergy needed to move an electron from the valence band to the conduction band. Lower or zero values tend to behave more metallic; larger gaps are more insulating or semiconducting.
Energy Above HullThermodynamic distance from the most stable set of competing phases. 0 eV/atom is on the convex hull; small positive values may still be experimentally accessible.
StabilityA plain-language summary of the best reported energy-above-hull result. It reflects whether the lowest-energy structure is on, near, or far from the stability hull.
StructuresCount of reported calculated crystal structures for this formula, including alternate polymorphs, source databases, and observed space groups.
Reported Structures
Lowest-energy structures reported for Al2As4K2O14, ranked by energy above hull.
| Space GroupSymmetry classification of the crystal arrangement. The number is the international space-group index. | Crystal SystemBroad lattice family, such as cubic, tetragonal, monoclinic, or triclinic, derived from unit-cell symmetry. | Band Gap (eV)Electronic gap calculated for this specific reported structure, measured in electronvolts. | E above hull (eV/atom)Thermodynamic distance from the convex hull for this structure, normalized per atom. Lower is generally more stable. | E/atom (eV)Computed total energy normalized per atom. Use energy above hull, not this value alone, when comparing stability. | Density (g/cm³)Mass per relaxed crystal volume, reported in grams per cubic centimeter. |
|---|---|---|---|---|---|
| P-1 (No. 2) | triclinic | 3.04 | 0.0024 | -6.660 | 3.49 |
| P-1 (No. 2) | — | — | — | — | — |
| — | — | — | — | — | 2.61 |
Applications
Where Al2As4K2O14 is used.
Frequently Asked Questions
Common questions about Al2As4K2O14, answered from cross-validated data.
What is Al2As4K2O14?
Al2As4K2O14 is a wide-gap insulating inorganic compound containing aluminum, arsenic, potassium, and oxygen that is considered a candidate for experimental synthesis.
What is Al2As4K2O14 used for?
What is the band gap of Al2As4K2O14?
Is Al2As4K2O14 a metal, semiconductor, or insulator?
Is Al2As4K2O14 thermodynamically stable?
What is the crystal structure of Al2As4K2O14?
What is the density of Al2As4K2O14?
How many polymorphs of Al2As4K2O14 are known?
What elements does Al2As4K2O14 contain?
Where does the data for Al2As4K2O14 come from?
How It Compares
As a unique inorganic compound, Al2As4K2O14 serves as a representative example of complex arsenate-based structures. Within the broader landscape of insulating oxides, it occupies a specialized niche where the interplay between aluminum and arsenic polyhedra defines its structural stability and electronic behavior.
Data sources & attribution
- materials_project — Data from the Materials Project. Cite: Jain et al., APL Materials 1, 011002 (2013).
- aflow — Data from AFLOW. Cite: Curtarolo et al., Comp. Mater. Sci. 58, 218 (2012).
- omat24 — Data from OMat24 (Meta FAIR). Cite: Barroso-Luque et al., arXiv 2410.12771 (2024).
Analyze Al2As4K2O14 in the Lattice Graph platform
Polymorph comparison, confidence scoring, supply-chain risk, and patent monitoring — across 53 integrated data sources.
Explore the Platform →